| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor device in which the resistance of a reverse parallel circuit of a field effect transistor and a Schottky barrier diode can be reduced.SOLUTION: In the GaN-based semiconductor device, a common electrode 25 serving as the drain electrode of an HFET (heterojunction field effect transistor) 1 and as the cathode of an SBD (Schottky barrier diode) 2 is extending in the width direction of a gate electrode 22 across both the HFET 1 and SBD 2. Consequently, in the HFET 1 in the on state, the region Z1 of electron flow spreads up to the region of the SBD 2 in the off state, and the electron flow flows up to the common electrode 25. When the HFET 1 is turned off and the SBD 2 is turned on, the region Z2 of electron flow spreads up to the region of the HFET 1, in the SBD 1 in the on state, and the electron flow flows from the common electrode 25 up to the anode 21. |
