Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation

摘要

Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

主权项

1. A method of implanting boron-containing ions, comprising:
ionizing a boron-containing composition comprising B2F4 under ionization conditions to generate boron-containing ions; and accelerating the boron-containing ions by electric field to implant boron-containing ions in a substrate, wherein the ionizing is conducted in a vacuum chamber containing an ion source and wherein another fluorine-containing species is introduced to said ionizing, to assist with cleaning of the vacuum chamber during said ionizing, and wherein the ionizing is conducted at an arc voltage of less than 100 volts.