发明名称 |
METHOD FOR SELECTIVELY FORMING NITRIDE CAPS ON METAL GATES AND SELF-ALGINED CONTACT COMPRISING THE NITRIDE CAPS |
摘要 |
A sacrificial cap is grown on an upper surface of a conductor. A dielectric spacer is against a side of the conductor. An upper dielectric side spacer is formed on a sidewall of the sacrificial cap. The sacrificial cap is selectively etched, leaving a cap recess, and the upper dielectric side spacer facing the cap recess. Silicon nitride is filled in the cap recess, to form a center cap and a protective cap having center cap and the upper dielectric spacer. |
申请公布号 |
WO2016191407(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
WO2016US33876 |
申请日期 |
2016.05.24 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
BAO, Junjing;YANG, Haining;LIU, Yanxiang;XU, Jeffrey Junhao |
分类号 |
H01L21/768;H01L29/417;H01L29/66;H01L29/78 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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