| 摘要 |
PCT No. PCT/EP93/01206 Sec. 371 Date Jan. 5, 1995 Sec. 102(e) Date Jan. 5, 1995 PCT Filed May 13, 1993 PCT Pub. No. WO94/27321 PCT Pub. Date Nov. 24, 1994.A method is described which makes it possible to use VLSI-quality crystalline semiconductor substrates for the fabrication of the active devices of Active Matrix Flat Panels (AMFPD). The VLSI substrates are provided by arranging a layer of light transparent material in those areas of a semiconductor wafer in which no active device has to be provided, eliminating the semiconductor wafer whereby a transparent wafer is obtained with crystalline semiconductor regions therein and then shaping the transparent wafer into a sized module unit. Several module units can be bonded to a glass substrate and a conductive material is then deposited to make electrical interconnections between the module units. The bonding operation can be performed either at room temperature using a light-transparent glue or at higher temperature using a wafer bonding technique known in the art of Silicon-On-Insulator technology.
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