SOI HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an SOI high breakdown semiconductor device satisfactory in voltage breakdown characteristics in an arbitrary reverse bias state. SOLUTION: A semiconductor substrate 1 and an n-type semiconductor layer 3 are laminated with a silicon oxide film 2 between, while a p-type semiconductor layer 9 and an n+layer semiconductor layer 11 are formed on the surface of the n-type semiconductor layer 3 with a source electrode 13 and a drain electrode 14 provided, respectively. A p-type semiconductor layer 12, whose conductivity is different from that of the n-type semiconductor layer 3 is formed at the interface between the n-type semiconductor layer 3 and a silicon oxide film 2. For the p-type semiconductor layer 12, the impurity amount for each unit region is set larger than 3×1012/cm2for avoiding entire depletion even if a reverse bias voltage is applied between the source electrode 13 and the drain electrode 14. COPYRIGHT: (C)2005,JPO&NCIPI