发明名称 EFFICIENT TRANSISTOR STRUCTURE
摘要 PROBLEM TO BE SOLVED: To reduce an area for a body contact in a transistor structure reduced in chip area. SOLUTION: An integrated circuit includes a first source 54 and a first drain 56. A first gate 58 is arranged between the first source 54 and the first drain 56. A first body 66 is arranged inside of and is surrounded by the first source 54. Alternatively, the integrated circuit includes the first source 54 and the first drain 56. The first gate 58 is arranged between the first source 54 and the first drain 56. The first body 66 is arranged inside of and surrounded by the first source 54. A second gate 58 is arranged between the first source 54 and the second drain 56. The first source 54 includes a source contact. The first and second gates 58 nearby the source contact are arranged more apart than in an area not near the source contact. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005236252(A) 申请公布日期 2005.09.02
申请号 JP20040238034 申请日期 2004.08.18
申请人 MARVELL WORLD TRADE LTD 发明人 SUTARDJA SEHAT
分类号 H01L21/8234;H01L27/07;H01L27/088;H01L29/06;H01L29/08;H01L29/10;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L21/823 主分类号 H01L21/8234
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