发明名称 DRY ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a dry etching method to suppress the generation of any physical damage at the time of finely working etching retardant materials containing transition metal as primary configuring elements. SOLUTION: Materials 1 to be etched containing transition metallic elements are exposed to gas-shaped substance 4 having at least one carboxyl group, and at least the exposed surface of the materials 1 to be etched is converted into carboxylate 5. The exposed surface of the materials 1 to be etched is irradiated with an energy beam 6, and the volatile elimination of the converted carboxylate 5 is carried out. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005236144(A) 申请公布日期 2005.09.02
申请号 JP20040045252 申请日期 2004.02.20
申请人 FUJITSU LTD 发明人 ISHIKAWA KENJI;HAYASHI MASAKAZU;YAGISHITA AKIO;NISHIKAWA NOBUYUKI
分类号 H01L21/302;H01L21/3065;H01L21/8246;H01L27/105;H01L43/08;H01L43/12;(IPC1-7):H01L21/302 主分类号 H01L21/302
代理机构 代理人
主权项
地址