MANUFACTURING METHOD OF SEMICONDUCTOR THIN FILM AND MANUFACTURING DEVICE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing device of a semiconductor thin film capable of forming an SiN thin film, enabled in proper stress control simultaneously at a low temperature with low hydrogen. SOLUTION: While entering electromagnetic waves of RF frequency into a chamber 11, a wafer 17 which deposits an SiN thin film is placed on a support base 26. In the structure where the temperature of the wafer 17 on the support base 26 is adjusted by a heater 27 and a refrigerant which flows through a refrigerant passage 28, flow-rate regulators 18, 19, the heater 27, and the amount of the refrigerant are controlled by a control unit 31, so that the RF power of the RF frequency to the total flow rate of the source gas composed of N2gas and SiH4gas may become 7W/sccm or less, and the temperature of the wafer 17 may be set between 50°C-300°C. COPYRIGHT: (C)2005,JPO&NCIPI