| 摘要 |
PROBLEM TO BE SOLVED: To grow a thin film of uniform composition by suppressing generation of surface defects, e.g. particles, in epitaxial growth of a compound semiconductor. SOLUTION: The vapor phase epitaxial growth system for growing a compound semiconductor epitaxially comprises a reactor 10 for epitaxially growing a thin film, a substrate holding table 6 disposed in the reactor 10 in order to mount a substrate 4 to be processed, a flow channel 3 provided in the reactor 10 in order to supply material gas to the surface of a substrate 4 from the substantially parallel direction, and a dummy substrate 12 composed of a single crystal material identical to that of the substrate 4 and having dimensions larger than those of the substrate 4 and being located oppositely to the surface of the substrate 4. COPYRIGHT: (C)2005,JPO&NCIPI
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