发明名称 |
INSPECTION APPARATUS AND METHOD BY ELECTRON BEAM, AND DEVICE MANUFACTURING METHOD USING THE INSPECTION APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To improve an inspection speed detecting a failure of a sample of a wafer, etc. SOLUTION: An inspection apparatus by an electron beam is one of a mapping projection type and comprises: a primary electron optical system for forming the electron beam emitted from en electron gun into a rectangle and irradiating onto a face of a sample to be inspected; a secondary electron optical system for converging secondary electrons emitted from the sample; a detection device for converting the converged secondary electrons into an optical image through a fluorescent plate to image them to a line sensor; and a control device for controlling charge moving time to transfer the line image which is imaged in a pixel string provided with the line sensor, cooperatively with the moving speed of a stage to move the sample. COPYRIGHT: (C)2005,JPO&NCIPI
|
申请公布号 |
JP2005235777(A) |
申请公布日期 |
2005.09.02 |
申请号 |
JP20050061093 |
申请日期 |
2005.03.04 |
申请人 |
EBARA CORP;TOSHIBA CORP |
发明人 |
YAMAZAKI YUICHIRO;WATANABE KENJI;SOFUGAWA TAKUJI;NOMICHI SHINJI;SATAKE TORU;YOSHIKAWA SEIJI;KARIMATA TSUTOMU;NAKASUJI MAMORU;HATAKEYAMA MASAKI;MURAKAMI TAKESHI;NAGAHAMA ICHIROTA;NAGAI TAKAMITSU;SUGIHARA KAZUYOSHI |
分类号 |
H01L21/66;H01J37/29;(IPC1-7):H01J37/29 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|