发明名称 INSPECTION APPARATUS AND METHOD BY ELECTRON BEAM, AND DEVICE MANUFACTURING METHOD USING THE INSPECTION APPARATUS
摘要 PROBLEM TO BE SOLVED: To improve an inspection speed detecting a failure of a sample of a wafer, etc. SOLUTION: An inspection apparatus by an electron beam is one of a mapping projection type and comprises: a primary electron optical system for forming the electron beam emitted from en electron gun into a rectangle and irradiating onto a face of a sample to be inspected; a secondary electron optical system for converging secondary electrons emitted from the sample; a detection device for converting the converged secondary electrons into an optical image through a fluorescent plate to image them to a line sensor; and a control device for controlling charge moving time to transfer the line image which is imaged in a pixel string provided with the line sensor, cooperatively with the moving speed of a stage to move the sample. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005235777(A) 申请公布日期 2005.09.02
申请号 JP20050061093 申请日期 2005.03.04
申请人 EBARA CORP;TOSHIBA CORP 发明人 YAMAZAKI YUICHIRO;WATANABE KENJI;SOFUGAWA TAKUJI;NOMICHI SHINJI;SATAKE TORU;YOSHIKAWA SEIJI;KARIMATA TSUTOMU;NAKASUJI MAMORU;HATAKEYAMA MASAKI;MURAKAMI TAKESHI;NAGAHAMA ICHIROTA;NAGAI TAKAMITSU;SUGIHARA KAZUYOSHI
分类号 H01L21/66;H01J37/29;(IPC1-7):H01J37/29 主分类号 H01L21/66
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