| 摘要 |
An atomic layer deposition method using a new precursor combination without deterioration of reaction rate or requiring additional oxidizers, a new precursor combination used in the atomic layer deposition method, a Hf-silicate thin film prepared by the atomic layer deposition method using the new precursor combination, and a method for controlling a composition for the Hf-silicate thin film by using metal-alkoxide and metal-alkylamide are provided. A method for atomic layer chemical vapor deposition of a metal thin film comprises the steps of: introducing a metal-alkylamide precursor; purging the metal-alkylamide precursor; introducing a metal-alkoxide precursor; and purging the metal-alkoxide precursor. The metal is selected from the group consisting of hafnium, silicon, zirconium, titanium, and aluminum. The metal-alkylamide precursor is Hf(NRR')4 or Si(NRR')4, the metal-alkoxide precursor is Hf(OR)4 or Si(OR)4, and the metal thin film is Hf-silicate. An atomic layer chemical vapor deposition precursor for preparation of a Hf-silicate thin film comprises Hf-alkylamide and Si-alkoxide. An atomic layer chemical vapor deposition precursor for preparation of a Hf-silicate thin film comprises Si-alkylamide and Hf-alkoxide. A method for preparation of a metal thin film layer comprises preparing a metal thin film layer into which metals bonded to metal-akylamide are more added by alternately performing an atomic layer chemical vapor deposition process of the metal-alkylamide and the metal-alkoxide while purging metal-alkylamide and metal-alkoxide. A Hf-silicate thin film has a Hf/(Hf+Si) ratio of 0.3 to 0.8, and a dielectric constant of 8 to 18.
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