发明名称 |
Semiconductor memory device and methods thereof |
摘要 |
A semiconductor memory device and methods thereof are provided. The example semiconductor memory device may include an internal address generating circuit operating in accordance with a first addressing protocol during normal operation and operating in accordance with a second addressing protocol during a test operation, the first addressing protocol associated with a first number of clock cycles for transferring a memory address and the second addressing protocol associated with a second number of clock cycles for transferring a memory address, the first number of clock cycles being greater than the second number of clock cycles. An example method may for achieving an single pumped address (SPA) mode in a semiconductor memory device configured for a double pumped address (DPA) mode may include receiving a first external address, generating a first internal address corresponding to the received first external address, receiving a second external address, generating a second internal address corresponding to the received second external address and delaying the generation of the first internal address to reduce a clock cycle interval between the generated first and second internal addresses.
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申请公布号 |
US2008094932(A1) |
申请公布日期 |
2008.04.24 |
申请号 |
US20070702569 |
申请日期 |
2007.02.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK MIN-SANG;LIM JEONG-DON;PARK YOUN-SIK |
分类号 |
G11C8/18;G11C7/00;G11C8/00;G11C29/00 |
主分类号 |
G11C8/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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