| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III nitride light-emitting element for generating light having a wavelength longer than 500 nm and preventing deterioration in emission intensity caused by through-dislocation. <P>SOLUTION: Since an AlN domain 27 is formed on the front surface 25b of the principal surface 25a of a barrier layer 25 prior to the growth of InGaN, the InGaN 29a grows on the front surface 25c not covered with the AlN domain 27. This InGaN grows covering the front surface of the AlN domain to form a InGaN 29c in the course of the growth of a well layer. In the similar manner, the plurality of InGaNs 29a, 29b grow from several apertures 27a in the AlN domain and these InGaNs are connected without causing dislocation to form the InGaN 29c. When the growth of the InGaN is advanced, am InGaN 29d grows flat and is formed on the whole of the principal surface 25a of the barrier layer 25. <P>COPYRIGHT: (C)2010,JPO&INPIT |
