| 摘要 |
PROBLEM TO BE SOLVED: To simplify a structure of a photoelectric conversion apparatus, reduce manufacturing steps, and improve a yield.SOLUTION: The photoelectric conversion apparatus includes: a photodiode 20, formed by laminating an n-type semiconductor film 21 and a p-type semiconductor film 22; and a TFT 11, including a source region 3s and a drain region 3d of a semiconductor film 3. The n-type semiconductor film 21 of the photodiode 20 and the source region 3s and the drain region 3d of the semiconductor film 3 of the TFT 11 are formed of the same material on the same layer. The p-type semiconductor film 22 of the photodiode 20 is a chalcopyrite semiconductor film.SELECTED DRAWING: Figure 6 |
