发明名称 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor structure includes at least one first crystalline layer and at least one second crystalline layer. The first crystalline layer has a plurality of recesses arranged along at least two intersection lines. The second crystalline layer is arranged in the recesses of the first crystalline layer and on the first crystalline layer. So, a germanium surface can be efficiently obtained at a low cost.
申请公布号 KR20160100209(A) 申请公布日期 2016.08.23
申请号 KR20150162028 申请日期 2015.11.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LEE TUNG YING;HUANG YU LIEN;CHEN MENG KU
分类号 H01L21/762;H01L21/02;H01L21/20;H01L21/8238 主分类号 H01L21/762
代理机构 代理人
主权项
地址
您可能感兴趣的专利