发明名称 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor structure includes at least one first crystalline layer and at least one second crystalline layer. The first crystalline layer has a plurality of recesses arranged along at least two intersection lines. The second crystalline layer is arranged in the recesses of the first crystalline layer and on the first crystalline layer. So, a germanium surface can be efficiently obtained at a low cost. |
申请公布号 |
KR20160100209(A) |
申请公布日期 |
2016.08.23 |
申请号 |
KR20150162028 |
申请日期 |
2015.11.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE TUNG YING;HUANG YU LIEN;CHEN MENG KU |
分类号 |
H01L21/762;H01L21/02;H01L21/20;H01L21/8238 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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