| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing agent capable of achieving high selectivity by suppressing a polishing speed against a silicon nitride film low while maintaining a sufficiently high polishing speed against a silicon oxide film, and a polishing method.SOLUTION: The polishing agent contains cerium oxide particles, water-soluble polyamine, potassium hydrate, organic acid and/or salt thereof, and water. The polishing agent has pH of higher than or equal to 10. The water-soluble polyamine is preferably water-soluble polyether polyamine having a weight average molecular weight of 100 to 2000. The organic acid is preferably gluconic acid or N-[Tris (hydroxymethyl) methyl] glycine.SELECTED DRAWING: Figure 1 |
