| 摘要 |
PROBLEM TO BE SOLVED: To upgrade productivity using vacuum vapor deposition method and realize a film with excellent gas barrier properties.SOLUTION: A gas barrier film is composed of a plastic base material 11, and a silicon nitride oxide film 13 formed on one side or both sides of the plastic base material 11. The silicon nitride oxide film is obtained by thermally evaporating a vapor deposition material 23 by the vacuum vapor deposition method of an electron beam heating system. In this case, the vapor deposition material meets the requirements: i.e the internal pressure of a film forming chamber 21 is not more than 5.0×10Pa, the N/Si composition ratio of silicon nitride and silicon content is not more 1.23 and the weight density is not less than 0.50g/cm. |
