发明名称 |
SILICON SEED CRYSTALS, THEIR PRODUCTION AND PROCESS FOR PRODUCING SILICON SINGLE CRYSTAL BY USING THESE SEED CRYSTALS |
摘要 |
PROBLEM TO BE SOLVED: To provide silicon seed crystals and process for producing the same capable of improving the success rate of single crystallization in a process for producing the silicon single crystal without executing so-called necking in the process for producing the silicon single crystal by a Czochralski method. SOLUTION: The shape at the front end of the silicon seed crystal to be brought into contact with a silicon melt in the process for producing the silicon single crystal by the Czochralski method is formed to a pointed shape or a shape formed by cutting off its pointed front end. The max.. vertexαthereof is >=3 to <=28 deg.. In such a case, the front end may be. etched or may be formed by using the round part formed by the Czochralski method. A silicon single crystal rod of a desired diameter is grown by using such silicon seed crystal without executing the necking.
|
申请公布号 |
JPH10324594(A) |
申请公布日期 |
1998.12.08 |
申请号 |
JP19970147320 |
申请日期 |
1997.05.21 |
申请人 |
SHIN ETSU HANDOTAI CO LTD |
发明人 |
IINO EIICHI |
分类号 |
C30B15/36;C30B29/06;H01L21/208;(IPC1-7):C30B15/36 |
主分类号 |
C30B15/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|