发明名称 SILICON SEED CRYSTALS, THEIR PRODUCTION AND PROCESS FOR PRODUCING SILICON SINGLE CRYSTAL BY USING THESE SEED CRYSTALS
摘要 PROBLEM TO BE SOLVED: To provide silicon seed crystals and process for producing the same capable of improving the success rate of single crystallization in a process for producing the silicon single crystal without executing so-called necking in the process for producing the silicon single crystal by a Czochralski method. SOLUTION: The shape at the front end of the silicon seed crystal to be brought into contact with a silicon melt in the process for producing the silicon single crystal by the Czochralski method is formed to a pointed shape or a shape formed by cutting off its pointed front end. The max.. vertexαthereof is >=3 to <=28 deg.. In such a case, the front end may be. etched or may be formed by using the round part formed by the Czochralski method. A silicon single crystal rod of a desired diameter is grown by using such silicon seed crystal without executing the necking.
申请公布号 JPH10324594(A) 申请公布日期 1998.12.08
申请号 JP19970147320 申请日期 1997.05.21
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 IINO EIICHI
分类号 C30B15/36;C30B29/06;H01L21/208;(IPC1-7):C30B15/36 主分类号 C30B15/36
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