| 摘要 |
<p>A method of grinding the opposite surfaces of a wafer one surface at a time by using a cup-type grinding stone, the method characterized by comprising the steps of, when first one surface of the wafer is ground, allowing the grinding stone to cut in starting at the outer peripheral edge of the wafer, advance toward the center from the outer periphery of the wafer, and be released at the center of the wafer to thereby effect grinding, and then, when the other surface of the wafer is ground, allowing the grinding stone to cut in starting at the center of the wafer, advance toward the the outer periphery from the center of the wafer, and be released at the outer periphery of the wafer to thereby effect grinding. Accordingly, the method of grinding a wafer can prevent the formation of protruded shapes at the center of the wafer when the opposite surfaces of the wafer are ground, and offer grinding to high-level flatness with a uniform wafer thickness.</p> |
