发明名称 SEMICONDUCTOR HETERO-JUNCTION FILM CONTAINING FULLERENE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor hetero-junction film wherein a p-type and an n-type organic semiconductor materials are uniformly mixed and having a high energy conversion efficiency. <P>SOLUTION: After a film containing a Diels-Alder addition product produced by Diels-Alder reaction between an organic compound to be a p-type semiconductor and fullerene is formed, the film is heated to separate the Diels-Alder addition product into the organic compound to be the p-type semiconductor and the fullerene to form the semiconductor hetero-junction film. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006344794(A) 申请公布日期 2006.12.21
申请号 JP20050169534 申请日期 2005.06.09
申请人 MITSUBISHI CHEMICALS CORP 发明人 GABIN TREBOUX;NAKAMURA SHINICHIRO
分类号 H01L51/42;H01L31/10 主分类号 H01L51/42
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