发明名称 |
SEMICONDUCTOR HETERO-JUNCTION FILM CONTAINING FULLERENE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor hetero-junction film wherein a p-type and an n-type organic semiconductor materials are uniformly mixed and having a high energy conversion efficiency. <P>SOLUTION: After a film containing a Diels-Alder addition product produced by Diels-Alder reaction between an organic compound to be a p-type semiconductor and fullerene is formed, the film is heated to separate the Diels-Alder addition product into the organic compound to be the p-type semiconductor and the fullerene to form the semiconductor hetero-junction film. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2006344794(A) |
申请公布日期 |
2006.12.21 |
申请号 |
JP20050169534 |
申请日期 |
2005.06.09 |
申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
GABIN TREBOUX;NAKAMURA SHINICHIRO |
分类号 |
H01L51/42;H01L31/10 |
主分类号 |
H01L51/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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