| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device capable of executing removal and reform of a film, on the side surface of a processing object substrate by obliquely entering ions into the processing object substrate without increasing the size thereof, and to provide a plasma processing method. <P>SOLUTION: This plasma processing device includes an exhaust means for evacuating the atmosphere in a vacuum vessel 107; a mass flow controller 108 for introducing a gas into the vacuum vessel 107; a plasma generation means (a slot antenna 105 and the like) generating plasma in the vacuum vessel; and a substrate support base 111 for mounting the processing object substrate 110 thereon. The substrate support base 111 includes a plurality of high-frequency power sources 202 for applying high-frequency waves; a phase control means 203 for controlling the phases of the high-frequency waves, applied from the high-frequency power sources 202; and a plurality of high-frequency electrodes 201 for respectively applying the plurality of phase-controlled high-frequency waves thereto. The phases of the high-frequency waves, respectively applied to the high-frequency electrodes 201, are shifted between the high-frequency electrodes 201 adjacent to each other, by the phase control means 203. <P>COPYRIGHT: (C)2008,JPO&INPIT |
