发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE UTILIZING LOW DIELECTRIC LAYER FILLING GAPS BETWEEN METAL LINES |
摘要 |
A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer.
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申请公布号 |
US2008318437(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20070834264 |
申请日期 |
2007.08.06 |
申请人 |
KIM CHAN BAE;LEE JONG MIN;CHUNG CHAE O;AN HYEON JU;LEE HYO SEOK;MIN SUNG KYU |
发明人 |
KIM CHAN BAE;LEE JONG MIN;CHUNG CHAE O;AN HYEON JU;LEE HYO SEOK;MIN SUNG KYU |
分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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