| 摘要 |
In the semiconductor device manufacturing method of the present invention, first, the emissivity of a wafer placed in a chamber is measured. Then, the fluctuation rate of a wafer physical quantity that fluctuates in association with the given thermal energy is calculated based on an estimate expression, which are obtained in advance, presenting the relationship between the thermal energy quantity emitted from the heat source for heating the wafer, wafer emissivity and the wafer physical quantity fluctuation rate and on the measured emissivity. Subsequently, the processing time for the physical quantity to be a specific value is calculated based on the calculated fluctuation rate. Then, the thermal process is conducted for the calculated processing time.
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