| 摘要 |
A silicon single crystal pulling method is provided to accurately control the diameter of the silicon single crystal and to obtain the silicon single crystal of the high quality. In the pulling process, the silicon single crystal is image-picked up by using the image pickup device. In the image image-picked up, the brightness distribution of the high brightness part which is generated in the interface of the silicon single crystal(15) and silicon solution(13) is measured at each scanning line of image. The surface location of the silicon solution and the solid-liquid interface location are detected. The diameter control of the silicon single crystal is controlled based on the meniscus height which is the difference of the solid-liquid interface location and the surface location.
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