发明名称 PLASMA ACTIVATED CHEMICAL VAPOUR DEPOSITION METHOD AND APPARATUS THEREFOR
摘要 <p>In plasma activated chemical vapour deposition a plasma decomposition unit (1) is used that is arranged in or connected to a vacuum vessel having a relatively low pressure or vacuum, to which an operating gas is provided. Periodically- repeated voltage pulses are applied between the anode (15a: 15b) and the cathode (7) of the plasma decomposition unit in such a manner that pulsed electric discharges are produced between the cathode and the surrounding anode of the plasma decomposition unit. The anode is arranged in a special way so that at least a portion thereof will obtain only an electrically conductive coating or substantially no coating when operating the unit. For that purpose, the anode includes a portion (15a) located in the direct vicinity of the free surface (5) of the cathode. The portion is a flange or edge portion which is located or extends over margins of the free surface of the cathode. In that way, the anode will include a portion (17) that is shielded for direct coating with particles from the plasma formed and that hence will obtain e.g. substantially no dielectric coating at all.</p>
申请公布号 WO2009075629(A1) 申请公布日期 2009.06.18
申请号 WO2008SE00699 申请日期 2008.12.12
申请人 PLASMATRIX MATERIALS AB;NICOLESCU, MIHAI;HJALMARSSON, AEKE;KOUZNETSOV, KLIM 发明人 NICOLESCU, MIHAI;HJALMARSSON, AEKE;KOUZNETSOV, KLIM;KOUZNETSOV, VLADIMIR
分类号 C23C16/515;C23C16/44;C23C16/52;H01J37/32 主分类号 C23C16/515
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