发明名称 |
PLASMA ACTIVATED CHEMICAL VAPOUR DEPOSITION METHOD AND APPARATUS THEREFOR |
摘要 |
<p>In plasma activated chemical vapour deposition a plasma decomposition unit (1) is used that is arranged in or connected to a vacuum vessel having a relatively low pressure or vacuum, to which an operating gas is provided. Periodically- repeated voltage pulses are applied between the anode (15a: 15b) and the cathode (7) of the plasma decomposition unit in such a manner that pulsed electric discharges are produced between the cathode and the surrounding anode of the plasma decomposition unit. The anode is arranged in a special way so that at least a portion thereof will obtain only an electrically conductive coating or substantially no coating when operating the unit. For that purpose, the anode includes a portion (15a) located in the direct vicinity of the free surface (5) of the cathode. The portion is a flange or edge portion which is located or extends over margins of the free surface of the cathode. In that way, the anode will include a portion (17) that is shielded for direct coating with particles from the plasma formed and that hence will obtain e.g. substantially no dielectric coating at all.</p> |
申请公布号 |
WO2009075629(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
WO2008SE00699 |
申请日期 |
2008.12.12 |
申请人 |
PLASMATRIX MATERIALS AB;NICOLESCU, MIHAI;HJALMARSSON, AEKE;KOUZNETSOV, KLIM |
发明人 |
NICOLESCU, MIHAI;HJALMARSSON, AEKE;KOUZNETSOV, KLIM;KOUZNETSOV, VLADIMIR |
分类号 |
C23C16/515;C23C16/44;C23C16/52;H01J37/32 |
主分类号 |
C23C16/515 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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