| 发明名称 | Refresh signal generation circuit and semiconductor device using the same | ||
| 摘要 | This technology includes: a refresh signal generation unit configured to generate a first preliminary refresh signal with a cycle varying according to temperature changes; a magnification adjustment unit configured to generate a second preliminary refresh signal and a third preliminary refresh signal, which have a cycle variation slope equal to the first preliminary refresh signal and have cycle magnifications different from the first preliminary refresh signal according to the first preliminary refresh signal; and a selection unit configured to output one of the first preliminary refresh signal, the second preliminary refresh signal, and the third preliminary refresh signal as a refresh signal according to a control signal. | ||
| 申请公布号 | US9384817(B1) | 申请公布日期 | 2016.07.05 |
| 申请号 | US201514686378 | 申请日期 | 2015.04.14 |
| 申请人 | SK HYNIX INC. | 发明人 | Kim Jae Hoon |
| 分类号 | G11C11/406;G11C11/4076 | 主分类号 | G11C11/406 |
| 代理机构 | William Park & Associates Ltd. | 代理人 | William Park & Associates Ltd. |
| 主权项 | 1. A refresh signal generation circuit comprising: a refresh signal generation unit configured to generate a first preliminary refresh signal with a cycle varying according to temperature changes; a magnification adjustment unit configured to generate a second preliminary refresh signal and a third preliminary refresh signal, which have a cycle variation slope equal to the first preliminary refresh signal and have cycle magnifications different from the first preliminary refresh signal according to the first preliminary refresh signal; and a selection unit configured to output one of the first preliminary refresh signal, the second preliminary refresh signal, and the third preliminary refresh signal as a refresh signal according to a control signal, wherein, in accordance with the cycle magnifications, numbers of refresh operations to be performed according to the first preliminary refresh signal, the second preliminary refresh signal and the third preliminary refresh signal, respectively, during a predetermined period of time under an equal temperature condition are different from each other. | ||
| 地址 | Icheon-Si KR | ||