Semiconductor device, electronic device, and semiconductor device manufacturing method

摘要

A semiconductor device, includes: a connection member including a first pad formed on a principal surface thereof; a semiconductor chip including a circuit-formed surface on which a second pad is formed, the chip mounted on the connection member so that the circuit-formed surface faces the principal surface; and a solder bump that connects the first and second pads and is made of metal containing Bi and Sn, wherein the bump includes a first interface-layer formed adjacent to the second pad, a second interface-layer formed adjacent to the first pad, a first intermediate region formed adjacent to either one of the interface-layers, and a second intermediate region formed adjacent to the other one of the interface-layers and formed adjacent to the first intermediate region; Bi-concentration in the first intermediate region is higher than a Sn-concentration; and a Sn-concentration in the second intermediate region is higher than a Bi-concentration.

主权项

1. A semiconductor device manufacturing method, comprising:
forming a first connection pad on a first principal surface of a first connection member; forming a second connection pad on a circuit-formed surface of a fast semiconductor chip on which a semiconductor integrated circuit is formed; placing the fast semiconductor chip on the first connection member in such a manner that the circuit-formed surface faces the first principal surface and the first connection pad contacts the second connection pad through a solder bump containing a Sn—Bi alloy; reflowing the solder bump for joining the first connection pad and the second connection pad; and applying a direct current after the joining between the first connection pad and the second connection pads using either one of the first or second connection pad as an anode and using the other one of the first and second connection pads as cathode, so as to concentrate Bi in the solder bump into a neighborhood of the anode and to concentrate Sn in the solder bump into a neighborhood of the cathode.