Semiconductor device and method of manufacturing semiconductor device

摘要

A semiconductor device includes a substrate having an active region, a first gate structure over a top surface of the substrate, a second gate structure over the top surface of the substrate, a pair of first spacers on each sidewall of the first gate structure, a pair of second spacers on each sidewall of the second gate structure, an insulating layer over at least the first gate structure, a first conductive feature over the active region and a second conductive feature over the substrate. Further, the second gate structure is adjacent to the first gate structure and a top surface of the first conductive feature is coplanar with a top surface of the second conductive feature.

主权项

1. An integrated circuit comprising:
a substrate comprising:
a source feature, anda drain feature; a first gate structure over a top surface of the substrate, wherein the first gate structure is between the source feature and the drain feature; a second gate structure over the top surface of the substrate, wherein the second gate structure is adjacent to the first gate structure and the source feature; a pair of first spacers on each sidewall of the first gate structure; a pair of second spacers on each sidewall of the second gate structure; an insulating layer over at least the first gate structure, the insulating layer being embedded between the pair of first spacers on each sidewall of the first gate structure; a first conductive feature over the source feature or the drain feature, wherein a top surface of the first conductive feature is coplanar with a top surface of the insulating layer; a second conductive feature over the substrate; and a third conductive feature, wherein the third conductive feature is over the first conductive feature or the second conductive feature.