Method for manufacturing semiconductor device

摘要

In a method for manufacturing a semiconductor, a Through Silicon Via (TSV) template wafer and production wafers form a sandwich structure, in which the TSV template wafer has TSV structures uniformly distributed therein, for providing electrical connection between the production wafers to form 3D interconnection. The TSV template wafer is obtained by thinning a semiconductor wafer, which facilitates reducing the difficulty in etching and filling. Connection parts are provided on the TSV template wafer, for convenience of interconnection between the overlying and underlying production wafers, which facilitates reducing the difficulty in alignment and improving the convenience of design of electrical connection for 3D devices.

主权项

1. A method for manufacturing a semiconductor device, comprising:
providing a Through Silicon Via (TSV) template wafer with a front side and a back side, and forming a number of uniformly distributed TSV holes on the TSV template wafer through photolithography and etching; filling a conductive material in the TSV holes; planarizing the TSV template wafer, so that the conductive material is located only in the TSV holes; removing portions of the conductive material in the TSV holes from the front and back sides of the TSV template wafer respectively through selective etching, and then filling a dielectric material in the TSV holes and planarizing the TSV template wafer; patterning connection regions on the front and back sides of the TSV template wafer to form trenches in the connection regions through photolithography and etching, and filling a conductive material in the trenches in the connection regions, to form connection parts; and providing production wafers on the front and back sides of the TSV template wafer respectively and bonding the production wafers with the TSV template wafer, to form a sandwich structure of the production wafer-the TSV template wafer-the production wafer, in which the production wafers are electrically connected by the connection parts in the TSV template wafer and the conductive material in the TSV holes.