Nano wire structure and method for fabricating the same

摘要

A device comprises a first group of nanowires having a first pattern, a second group of nanowires having a second pattern, a third group of nanowires having a third pattern and a fourth group of nanowires having a fourth pattern, wherein the first pattern, the second pattern, the third pattern and the fourth pattern form a repeating pattern.

主权项

1. A method comprising:
applying a first patterning process to a first photoresist layer, wherein the first photoresist layer is formed over a sacrificial layer, and wherein the sacrificial layer is formed over a substrate; forming first openings in the sacrificial layer through a first etching process; applying a second patterning process to a second photoresist layer, wherein the second photoresist layer is formed over the sacrificial layer; forming second openings in the sacrificial layer through a second etching process, wherein the second openings and the first openings are arranged in an alternating manner; and forming first nanowires based on the first openings and second nanowires based on the second openings.