发明名称 Electrostatic discharge protection for level-shifter circuit
摘要 A circuit, a multiple power domain circuit, and a method are disclosed. An embodiment is a circuit including an input circuit having a first output and a second output, the input circuit being coupled to a first power supply voltage, and a level-shifting circuit having a first input coupled to the first output of the input circuit and a second input coupled to the second output of the input circuit, the level-shifting circuit being coupled to a second power supply voltage. The circuit further includes a first transistor coupled between a first node of the level-shifting circuit and the second power supply voltage, and a control circuit having an output coupled to a gate of the first transistor, the control circuit being coupled to the second power supply voltage.
申请公布号 US9466978(B2) 申请公布日期 2016.10.11
申请号 US201314031826 申请日期 2013.09.19
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chen Chia-Hui;Chu Chia-Hung;Chen Kuo-Ji;Song Ming-Hsiang;Lu Lee-Chung
分类号 H02H9/04;H01L27/02;H03K3/013;H03K5/003 主分类号 H02H9/04
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A circuit comprising: an input circuit having a first output and a second output, the input circuit being coupled to a first power supply voltage; a level-shifting circuit having a first input coupled to the first output of the input circuit and a second input coupled to the second output of the input circuit, the level-shifting circuit being coupled to a second power supply voltage; a first transistor coupled between a first node of the level-shifting circuit and the second power supply voltage; and a control circuit having an output coupled to a gate of the first transistor, the control circuit being coupled to the second power supply voltage, the control circuit being configured to turn off the first transistor in response to an electrostatic discharge (ESD) event.
地址 Hsin-Chu TW