| 发明名称 |
GLOBAL SHUTTER HIGH DYNAMIC RANGE SENSOR |
| 摘要 |
The present invention provides a pixel circuit comprising a pinned photodiode, at least one first transfer gate for electrically connecting the pinned photodiode to at least one storage node and at least one further transfer gate. The at least one further gate can connect the at least one storage node with at least one floating diffusion node. At least one merging switch is included for allowing connection between the at least one floating diffusion node with one or more capacitor nodes, which can accept charge that exceeds the maximum storage capacity of the storage node. |
| 申请公布号 |
US2016360127(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615173905 |
申请日期 |
2016.06.06 |
| 申请人 |
Caeleste CVBA |
发明人 |
DIERICKX Bart;ZHU Jiaqi;KUMAR KALGI Ajit;YAO Qiang;LIEKENS Koen;CAI Gaozhan;LUYSSAERT Bert;VAN AKEN Dirk;GAO Peng |
| 分类号 |
H04N5/355;H04N5/353;H04N5/361;H04N5/357;H04N5/372;H04N5/359 |
主分类号 |
H04N5/355 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An image sensor comprising one pinned photodiode, at least one first transfer gate for electrically connecting the pinned photodiode to at least one storage node, at least one second transfer gate for electrically connecting the at least one storage node with at least one floating diffusion node, and at least one merging switch for connecting the at least one floating diffusion layer with at least one capacitor node, for accepting any charge that exceeds the maximum capacity of the storage node. |
| 地址 |
Mechelen BE |
