发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To make structures of transistors arranged in various kinds of circuits proper depending on functions of the circuits to improve performance characteristics and reliability of a semiconductor device and achieve low power consumption, and reduces the number of processes to reduce manufacturing cost and improvement of yield.SOLUTION: In a semiconductor device, a transistor having an LDD region is formed. In order to form the LDD region a gate electrode having a tapered part is provided, an ionized N or P-type impurity element is accelerated by an electric field to pass the gate electrode and the gate insulation film to be added to a semiconductor layer.SELECTED DRAWING: Figure 3
申请公布号 JP2016213481(A) 申请公布日期 2016.12.15
申请号 JP20160132323 申请日期 2016.07.04
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;ONO KOJI;ARAI YASUYUKI
分类号 H01L29/786;G02F1/1362;G02F1/1368;H01L21/20;H01L21/265;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/41;H01L29/423;H01L29/49 主分类号 H01L29/786
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