发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To make structures of transistors arranged in various kinds of circuits proper depending on functions of the circuits to improve performance characteristics and reliability of a semiconductor device and achieve low power consumption, and reduces the number of processes to reduce manufacturing cost and improvement of yield.SOLUTION: In a semiconductor device, a transistor having an LDD region is formed. In order to form the LDD region a gate electrode having a tapered part is provided, an ionized N or P-type impurity element is accelerated by an electric field to pass the gate electrode and the gate insulation film to be added to a semiconductor layer.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016213481(A) |
申请公布日期 |
2016.12.15 |
申请号 |
JP20160132323 |
申请日期 |
2016.07.04 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;ONO KOJI;ARAI YASUYUKI |
分类号 |
H01L29/786;G02F1/1362;G02F1/1368;H01L21/20;H01L21/265;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/41;H01L29/423;H01L29/49 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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