| 摘要 |
PROBLEM TO BE SOLVED: To even the sensitivity of each semi-conductor sensor by forming plural semi-conductor sensors, which detect radiation, on a single wafer substrate. SOLUTION: An impurity such as boron is selectively diffused in one surface of a wafer substrate 10 of silicon or germanium for each of semi-conductor sensors A to E so as to form a (p) type region. The (p) type regions of the semi-conductors A, B are formed into a square, and the (p) type regions of the semi-conductors C-E are respectively divided into a central part and a peripheral part. An impurity such as phosphorus is diffused over the whole of the other surface of the wafer substrate so as to form an (n<+> ) region as an electrode layer, and a fetch electrode 14 is formed under the (n<+> ) region. The (p) type regions of the semi-conductors A, B are respectively formed with a voltage applying electrode 12, and the (p) type regions of the semi- conductors C to E are respectively formed with an electrode 12A at the central part thereof and an electrode 12B in the peripheral part thereof. One surface of the wafer substrate 10 is formed with a surface protecting layer 11 of an oxide film or the like. Reverse voltage is applied between the electrode 12 and the electrode 14 so as to form an intrinsic region, and PIN type semi-conductor sensors A to E are thereby formed.
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