| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor array panel and a CVD (chemical vapor deposition) apparatus which can prevent environmental contamination and can be cleaned at a low cost. SOLUTION: The method of manufacturing the thin film transistor array panel includes first, second, third, fourth and fifth steps. In the first step, gate lines 121, 124, 129 are formed on an insulating substrate 110. In the second step, a gate insulating film 140, a semiconductor layer and an ohmic contact layer are formed on the gate lines. In the third step, data lines 171, 173, 175, 179 including a source electrode 173 and a drain electrode 175 are formed on the ohmic contact layer. In the fourth step, a protecting film 180 is formed over the data lines. In the fifth step, a pixel electrode 190 coupled via the drain electrode 175 and a contact hole 181 is formed on the protecting film. In the second step, before successively forming the gate insulating layer, the semiconductor layer and the ohmic contact layer, fluorine gas is used for the inside of the CVD apparatus to perform cleaning. COPYRIGHT: (C)2005,JPO&NCIPI
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