| 摘要 |
PROBLEM TO BE SOLVED: To provide a microscopic semiconductor device having a high curent-driving capability by supprssing an off-leak current and an extremely decresed offset voltage. SOLUTION: The semiconductor device has a semiconductor substrate (1), a pair of element isolation insulating film (2) formed separated on the semiconductor substrate and defining the element region, a pair of impurity diffusion regions (5, 6) formed in the element region contacting with the element isolation insulating film, a channel region (7) sandwiched by the impurity diffusion regions, and a gate electrode (4) formed on the channel region through the gate insulating film (3) saparated from the end of the impurity diffusion region. The gate length of the gate elelctrode is not more than 30 nm, the distance between the impurity diffusion region and the gate electrode edge is not more than 10 nm, and a lateral distribution of an impurity concentration in the impurity diffusion region is not less than 1 order of magnitude/3 nm. COPYRIGHT: (C)2005,JPO&NCIPI
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