| 摘要 |
PROBLEM TO BE SOLVED: To provide a plane light emitting semiconductor element which can realize good current confinement. SOLUTION: A first conductive semiconductor region 3 is provided on a GaAs semiconductor region. An active layer 5 is provided on the first conductive semiconductor region 3. In a second conductive semiconductor layer 7, a first DBR 2 provided on the active layer 5 has first and second semiconductor DBR layers 2a and 2b alternately arranged therein. A second DBR 15 has third and fourth DBR semiconductor layers 15a and 15b alternately arranged therein. The first conductive semiconductor region 3, the active layer 5, and the second conductive semiconductor layer 7 are provided between the first and the second DBR semiconductors 2 and 15. A current block semiconductor region 9 is provided on the side surface 3a of the first conductive semiconductor region 3 on the side surface 5a of the active layer 5, and on the side surface 9a of the second conductive semiconductor layer 9. The active layer 5 is made of a group III-V based compound semiconductor containing at least nitrogen element as a group V. COPYRIGHT: (C)2005,JPO&NCIPI
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