| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a semiconductor device by which a isolation can be improved even with the same processing accuracy. SOLUTION: The semiconductor device comprises an n<SP>+</SP>-type substrate region 1 which constitutes a semiconductor substrate of a first conductivity, grooves arranged in parallel with each other in one principal plane of an n-type drain region 2, a source region 3 of the first conductivity so formed as to be in contact with the principal plane between the grooves, and the base region 7 of a second conductivity not in contact with the source region 3. Inside the grooves, insulated electrodes 5 are formed which are insulated from the drain region 2 by means of an insulation film 4 and which are kept at the same potential as the source region 3. The insulated electrodes 5 are made of such a prescribed semiconductor material that a built-in potential difference at least between the insulated electrodes 5 and the drain region 2 (channel region 6) held between the insulated electrodes 5 becomes larger, and a depletion layer is expanded toward the drain region 2 side than in the case that the insulated electrodes 5 are made of polycrystalline silicon of the second conductivity which has infinitely high impurity concentration. COPYRIGHT: (C)2005,JPO&NCIPI
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