| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate cleaning technique for improving the effect of a rinsing process that is carried out after a substrate undergoes chemical processing so as to reduce the consumption of the rinsing DIW. SOLUTION: A rinsing process with a chelate aqueous solution is prepared after an HPM treating process is carried out, so that the speed of removing heavy metal particles from the surface of the substrate is accelerated by the metal sealing mechanism of a chelating agent contained in the chelate aqueous solution. The rinsing process with a weak alkaline solution is provided after an APM treating process, whereby an electrostatic force acting between the surface of a substrate and particles can be made minus by controlling, and the particles are prevented from sticking again to the surface of the substrate. By this setup, the rinsing process performed after an HPM and APM treating processes can be carried out in a shorter time than a usual cleaning method, so that the consumption of the DIW can be restrained. COPYRIGHT: (C)2005,JPO&NCIPI
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