| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which is operated at low power consumption and low current writing and which has high reliability without element damage, and to provide a magnetic memory using the same. SOLUTION: The magnetoresistance effect element includes a first magnetization fixed layer 6 which has at least one magnetic layer and in which the direction of a spin is fixed; a second magnetization fixed layer 14 having at least one magnetic layer, and in which a direction of a spin is fixed; a magnetic recording layer 10 which is provided between the first magnetization fixed layer and the second magnetization fixed layer, which has at least one magnetic layer, and in which the direction of the spin is variable; a tunnel barrier layer 8 provided between the first magnetization fixed layer and the magnetic recording layer; and an intermediate layer 12 provided between the magnetic recording layer and the second magnetization fixed layer. The magnetic memory using the same is provided. COPYRIGHT: (C)2005,JPO&NCIPI
|
