| 摘要 |
<p>A method for manufacturing a thin film transistor having an LDD(Lightly Doped Drain) structure using MILC(Metal Induced Lateral Crystallization) is provided to simplify the process by omitting an additional ion-implantation process for forming the LDD. A semiconductor layer is forming by depositing an amorphous thin film on a transparent substrate and patterning. A gate insulating layer(22) and a gate electrode(23) are formed on the semiconductor layer to define an exposed source/drain region and a non-exposed channel region. A first MIC(Metal Induced Crystallization) layer(25a) and a second MIC layer(25b) are formed on the substrate to crystallize an amorphous semiconductor thin film. A source region and a drain region are defined by implanting dopant, and an LDD region(21LDD) is simultaneously formed at an exposed offset portion. By annealing the resultant structure, a semiconductor layer is crystallized to a polysilicon layer and the implanted dopant is activated.</p> |
