发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING SAME
摘要 PURPOSE: The substrate processing apparatus and the method for treating substrates using this. The generation of heat caused by the direct current voltage can be shirked. The damage of the bias voltage impressing part by the load increase can be prevented tellingly. CONSTITUTION: The substrate processing apparatus(60) and the method for treating substrates using this. The accepting chamber, bottom electrode, activating electricity application portion, bias power application portion is included. The accepting chamber accepts substrate. In order to be arranged within the accepting chamber and it preserves substrate the bottom electrode is formed.
申请公布号 KR20100109513(A) 申请公布日期 2010.10.08
申请号 KR20100028811 申请日期 2010.03.30
申请人 TOKYO ELECTRON LIMITED 发明人 OHSE TAKESHI;HIMORI SHINJI;ABE JUN;YAMADA NORIKAZU
分类号 H01L21/3065 主分类号 H01L21/3065
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