发明名称 High-voltage generating circuit including charge transfer switching circuit for selectively controlling body bias voltage of charge transfer device
摘要 Provided are a charge transfer switch circuit for selectively controlling body bias voltage of a charge transfer device, and a boosted voltage generating circuit having the same. The charge transfer switch circuit may include a capacitor whose voltage is boosted based on first and second control signals, a first transistor connected between a supply voltage and the capacitor and having a gate receiving a precharge signal, a second transistor connected between a first node and a second node and having a gate connected to a terminal of the capacitor, a third transistor connected between the first node and a bulk voltage of the second transistor and having a gate receiving the first control signal, and a fourth transistor connected between the bulk voltage of the second transistor and a ground voltage and having a gate receiving the second control signal.
申请公布号 US2007286007(A1) 申请公布日期 2007.12.13
申请号 US20070709768 申请日期 2007.02.23
申请人 KIM JUNG-SIK;HWANG SOO-MAN;JANG YOUNG-MIN 发明人 KIM JUNG-SIK;HWANG SOO-MAN;JANG YOUNG-MIN
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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