| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device that can be operated for a long time period by relaxing heat stress or heat strain generated upon manufacturing or operating. <P>SOLUTION: A semiconductor device 11 has a semiconductor substrate 20, an insulation ceramic plate 30 mounting the semiconductor substrate, and a stress relaxation member 40 for relaxing heat stress. The stress relaxation member is formed between the semiconductor substrate and the insulation ceramic plate, and at least one side in both sides of the insulation ceramic plate, at the opposite side to a side where the semiconductor substrate is mounted. The stress relaxation member is formed of a structure including at least Al and a secondary phase, and the secondary phase is composed of an Al<SB>4</SB>X, wherein X is at least one kind of an alkaline earth metal element. <P>COPYRIGHT: (C)2009,JPO&INPIT |
