发明名称 Techniques for selecting write endurance classification of flash storage based on read-write mixture of I/O workload
摘要 Processing I/O operations is described. A write operation writes first data to a first location on a logical device having a logical address space partitioned into extents. The first location is included in a first subrange of the logical address space. Each extent includes logical address subranges of the logical address space. The first subrange is one of the logical address subranges of a first extent of the logical device. Physical storage is allocated from a first physical device of a first write endurance classification of flash memory-based storage devices. The first write endurance classification is selected in accordance with a ranking of multiple write endurance classifications. The physical storage is mapped to the first subrange. The first data is stored on the allocated physical storage. First workload information for the first write endurance classification for the first extent is updated to reflect the first write operation.
申请公布号 US9378136(B1) 申请公布日期 2016.06.28
申请号 US201414319040 申请日期 2014.06.30
申请人 EMC Corporation 发明人 Martin Owen
分类号 G06F12/00;G06F12/02 主分类号 G06F12/00
代理机构 Muirhead and Saturnelli, LLC 代理人 Muirhead and Saturnelli, LLC
主权项 1. A method of processing I/O operations comprising: receiving a first write operation to write first data to a first location on a logical device, wherein said logical device has a corresponding logical address space partitioned into a plurality of extents and said first location is included in a first subrange of the logical address space, each of said extents including a plurality of logical address subranges of the logical address space, a first of said plurality of extents including a first plurality of logical address subranges, said first subrange being one of the first plurality of logical address subranges of the first extent; allocating first physical storage from a first physical device of a first of a plurality of write endurance classifications of flash memory-based storage devices, wherein the first write endurance classification is selected in accordance with a ranking of said plurality of write endurance classifications; mapping the first physical storage to the first subrange; storing the first data on the first physical storage; and updating first workload information for the first write endurance classification for the first extent to reflect the first write operation, wherein said first workload information indicates mixture of read and write operations directed to logical addresses of the first extent mapped to physical storage of the first write endurance classification of flash memory-based storage devices.
地址 Hopkinton MA US