| 发明名称 |
LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION |
| 摘要 |
LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer. |
| 申请公布号 |
WO2016111789(A1) |
申请公布日期 |
2016.07.14 |
| 申请号 |
WO2015US64295 |
申请日期 |
2015.12.07 |
| 申请人 |
APPLE INC. |
发明人 |
BOUR, DAVID P.;MCGRODDY, KELLY;HAEGER, DANIEL ARTHUR;PERKINS, JAMES MICHAEL;CHAKRABORTY, ARPAN;DROLET, JEAN-JACQUES P. |
| 分类号 |
H01L33/44 |
主分类号 |
H01L33/44 |
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