发明名称 SCAN TESTABLE THROUGH SILICON VIAs
摘要 The disclosure describes a novel method and apparatus for testing different types of TSVs in a single die or different types of TSV connections in a stack of die. The testing is facilitated by test circuitry associated with each type of TSV. The test circuitry includes a scan cell adapted for testing TSVs.
申请公布号 US2016293506(A1) 申请公布日期 2016.10.06
申请号 US201615182817 申请日期 2016.06.15
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 Whetsel Lee D.
分类号 H01L21/66;H01L25/065;G01R31/28;H01L23/48 主分类号 H01L21/66
代理机构 代理人
主权项 1. An integrated circuit comprising: (a) a die having a top surface and a bottom surface; (b) a top contact point on the top surface and a bottom contact point on the bottom surface; (c) a through silicon via in the die having a top end coupled to the top contact point and a bottom end coupled to the bottom contact point; (d) a first switch having a first lead connected to the bottom contact point, a second lead connected to the bottom end of the through silicon via, a stimulus lead, and a control input; and (e) a scan cell having a reference voltage input, a serial data input, a control input, a response input coupled to between the top contact point and the top end of the through silicon via, a stimulus output connected to the stimulus lead, and a serial data output.
地址 Dallas TX US