PROCESS FOR FABRICATING A STRUCTURE HAVING A BURIED DIELECTRIC LAYER OF UNIFORM THICKNESS

摘要

A process is used for fabricating a final structure comprising in succession a useful semiconductor layer, a dielectric layer and a carrier substrate. The process comprises providing an intermediate structure including an upper layer, the dielectric layer and the carrier substrate, and finishing the intermediate structure to form the final structure by performing a treatment nonuniformly modifying the thickness of the dielectric layer following a predetermined dissolution profile. The dielectric layer of the intermediate structure has a thickness profile complementary to the predetermined dissolution profile.

主权项

1. A process for fabricating a final structure comprising in succession a useful semiconductor layer, a dielectric layer and a carrier substrate, the process comprising:
providing an intermediate structure including an upper semiconductor layer, the dielectric layer and the carrier substrate; and finishing the intermediate structure to form the final structure by performing a treatment on the intermediate structure and nonuniformly modifying a thickness of the dielectric layer following a predetermined dissolution profile; wherein the dielectric layer of the intermediate structure has a thickness profile complementary to the predetermined dissolution profile.