COMPOSITION FOR PATTERN FORMATION, PATTERN-FORMING METHOD, AND BLOCK COPOLYMER

摘要

A composition for pattern formation capable of forming a directed self-assembling film having a regular array structure with fine pitches accompanied by fewer defects, and in turn capable of forming a pattern having a fine and favorable shape. A composition for pattern formation contains a block copolymer that forms a phase separation structure by directed self-assembly, and a solvent, in which the block copolymer has a first block composed of a first repeating unit that includes a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of the main chain and links to the first block, in which the first group is a monovalent group that forms a compound having C log P of no less than 2.4 provided that a methyl group is bonded thereto. The first group may be a monovalent hydrocarbon group having 3 to 25 carbon atoms, or a monovalent aromatic heterocyclic group having 3 to 25 carbon atoms and one hetero atom that constitutes the ring.

主权项

1. A composition for pattern formation comprising:
a block copolymer that forms a phase separation structure by directed self-assembly; and a solvent, wherein the block copolymer comprises a first block composed of a first repeating unit that comprises a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of a main chain and links to the first block, and wherein the first group is a monovalent group that forms a compound having C log P of no less than 2.4 provided that a methyl group is bonded to an atom on a side of the main chain.