| 摘要 |
A semiconductor structure may include a first electrode over a substrate, a high-K dielectric material over the first electrode, and a second electrode over the high-K dielectric material, wherein at least one of the first electrode and the second electrode may include a material selected from the group consisting of a molybdenum nitride (MoaNb) material, a molybdenum oxynitride (MoOxNy) material, a molybdenum oxide (MoOx) material, and a molybdenum-based alloy material comprising molybdenum and nitrogen. |
| 主权项 |
1. A semiconductor structure, comprising:
a first electrode over a substrate, the first electrode comprising a first portion over the substrate and a second portion over the first portion, the first portion comprising a different material than the second portion, the material of the second portion selected from the group consisting of a molybdenum nitride (MoaNb) material, a molybdenum oxynitride (MoOxNy) material, and a molybdenum-based alloy material comprising molybdenum and nitrogen; a high-K dielectric material in direct contact with the second portion of the first electrode; and
a second electrode over the high-K dielectric material, a material of the second electrode selected from the group consisting of ruthenium dioxide, iridium oxide, molybdenum oxide, tungsten oxide, chromium oxide, manganese oxide, tin oxide, cobalt oxide, titanium nitride, tantalum nitride, and combinations thereof. |
